in a normal ccd with front-illuminated ccd structure, the light sensitive pixels have a charge transfer function as well, and this function requires the front surface of light sensitive pixels to be covered by a semi-transparent poly-si electrode for the charge transfer function. the poly-si electrode absorbs some percentage of incoming photons depending on their wavelength. especially of of the uv light is not able to reach the light sensitive pixels. to overcome this disadvantage, in a back-thinned ccd, the ccd is turned upside down and this back side of the ccd is thinned to 10-15 m in thickness. incident photons now enter the ccd from the back-thinned side, without the poly-si electrode in the light path. then qe values of greater than 90 % can be achieved. spectral response spectral response 0 20 40 60 100 80 400 200 600 800 1000 1200 wavelength (nm) quantum efficiency (%) C8000-30 bt-ccd camera C8000-30 system configuration system configuration features features principle principle real time background subtraction recursive filter (2, 4, 8, 16, 32 and 64 frames selectable) the C8000-30 employs an ultrahigh-sensitivity back-thinned ccd sensor made by hamamatsu, which offers extremely high quantum efficiency in a wide range of uv, vis and nir wavelengths. the high uv sensitivity from 120 nm is useful for semiconductor mask inspection and measurement applications. also, the high nir sensitivity is useful for fluorescence measurement, nir ld measurement and so on. high-sensitivity imaging from uv to near- infrared wavelengths - uv: quantum efficiency over 60 % (at 200 nm) - near-infrared: quantum efficiency over 90 % (at 650 nm) quantum efficiency in uv source (reference data) light source wavelength (nm) quantum efficiency (%) (typ.) f 2 157 84 arf 193 57 krf 248 69 fourth harmonic generation of a yag laser i line 365 47 (this is typical, not guaranteed.) 266 50 * uv light irradiation may cause a drop in sensitivity and increase the dark current of the ccd sensor. " " $ " % " 1 5 0 3 1 0 8 & |